2N6035
vs
2N6035
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
ONSEMI
|
MOTOROLA INC
|
| Package Description |
PLASTIC, CASE 77-09, 3 PIN
|
FLANGE MOUNT, R-PSFM-T3
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
8541.29.00.95
|
| Samacsys Manufacturer |
onsemi
|
|
| Collector Current-Max (IC) |
4 A
|
4 A
|
| Collector-Emitter Voltage-Max |
60 V
|
60 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
100
|
100
|
| JEDEC-95 Code |
TO-225AA
|
TO-225AA
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
235
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
1.5 W
|
1.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
25 MHz
|
25 MHz
|
| Base Number Matches |
2
|
1
|
| Collector-Base Capacitance-Max |
|
200 pF
|
| Power Dissipation Ambient-Max |
|
40 W
|
| VCEsat-Max |
|
3 V
|
|
|
|
Compare 2N6035 with alternatives
Compare 2N6035 with alternatives