2N5875
vs
2N5876E3
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
10 A
|
10 A
|
| Configuration |
SINGLE
|
|
| DC Current Gain-Min (hFE) |
20
|
20
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
|
| Operating Temperature-Max |
200 °C
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
150 W
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Transition Frequency-Nom (fT) |
4 MHz
|
|
| Base Number Matches |
35
|
1
|
| Collector-Emitter Voltage-Max |
|
80 V
|
| JEDEC-95 Code |
|
TO-3
|
| JESD-30 Code |
|
O-MBFM-P2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
FLANGE MOUNT
|
| Terminal Form |
|
PIN/PEG
|
| Terminal Position |
|
BOTTOM
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare 2N5876E3 with alternatives