2N5681TIN/LEAD
vs
2N5681
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
2018-01-30
Collector Current-Max (IC)
1 A
1 A
Collector-Base Capacitance-Max
50 pF
50 pF
Collector-Emitter Voltage-Max
100 V
100 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
5
5
JEDEC-95 Code
TO-39
TO-5
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
200 °C
200 °C
Operating Temperature-Min
-65 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
1 W
Power Dissipation-Max (Abs)
10 W
1 W
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
30 MHz
30 MHz
VCEsat-Max
2 V
0.6 V
Base Number Matches
1
33
Qualification Status
Not Qualified
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