2N5681TIN/LEAD
vs
2N5681
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
NEW ENGLAND SEMICONDUCTOR
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2018-01-30
|
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Collector-Base Capacitance-Max |
50 pF
|
50 pF
|
| Collector-Emitter Voltage-Max |
100 V
|
100 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
5
|
5
|
| JEDEC-95 Code |
TO-39
|
TO-5
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
1 W
|
|
| Power Dissipation-Max (Abs) |
10 W
|
1 W
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
30 MHz
|
30 MHz
|
| VCEsat-Max |
2 V
|
0.6 V
|
| Base Number Matches |
1
|
33
|
| Qualification Status |
|
Not Qualified
|
|
|
|
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