2N5655
vs
BD678A
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
Ihs Manufacturer |
STMICROELECTRONICS
|
COMSET SEMICONDUCTORS
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Case Connection |
ISOLATED
|
|
Collector Current-Max (IC) |
0.5 A
|
4 A
|
Collector-Base Capacitance-Max |
25 pF
|
|
Collector-Emitter Voltage-Max |
250 V
|
60 V
|
Configuration |
SINGLE
|
DARLINGTON
|
DC Current Gain-Min (hFE) |
5
|
750
|
JEDEC-95 Code |
TO-126
|
TO-126
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
NPN
|
PNP
|
Power Dissipation Ambient-Max |
20 W
|
|
Power Dissipation-Max (Abs) |
20 W
|
40 W
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
AMPLIFIER
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
10 MHz
|
|
VCEsat-Max |
10 V
|
2.8 V
|
Base Number Matches |
14
|
19
|
Turn-off Time-Max (toff) |
|
5000 ns
|
Turn-on Time-Max (ton) |
|
1500 ns
|
|
|
|
Compare 2N5655 with alternatives
Compare BD678A with alternatives