2N5612
vs
2N3879
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
SOLITRON DEVICES INC
|
INTERSIL CORP
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
8541.29.00.75
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
5 A
|
7 A
|
| Collector-Emitter Voltage-Max |
100 V
|
75 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
20
|
| JEDEC-95 Code |
TO-66
|
TO-213AA
|
| JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
25 W
|
35 W
|
| Power Dissipation-Max (Abs) |
25 W
|
35 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
50 MHz
|
40 MHz
|
| VCEsat-Max |
0.75 V
|
1.2 V
|
| Base Number Matches |
1
|
2
|
| Collector-Base Capacitance-Max |
|
175 pF
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Min |
|
-65 °C
|
| Terminal Finish |
|
TIN LEAD
|
| Turn-off Time-Max (toff) |
|
1200 ns
|
| Turn-on Time-Max (ton) |
|
440 ns
|
|
|
|
Compare 2N5612 with alternatives
Compare 2N3879 with alternatives