2N5551TRE
vs
2N5551ZL1
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
MOTOROLA INC
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Collector-Emitter Voltage-Max
160 V
160 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
80
30
JEDEC-95 Code
TO-92
TO-92
JESD-30 Code
O-PBCY-T3
O-PBCY-T3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
NPN
NPN
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
100 MHz
100 MHz
Base Number Matches
1
4
Package Description
CYLINDRICAL, O-PBCY-T3
HTS Code
8541.29.00.75
Additional Feature
EUROPEAN PART NUMBER
Collector Current-Max (IC)
0.6 A
Collector-Base Capacitance-Max
6 pF
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
1.5 W
Transistor Application
AMPLIFIER
VCEsat-Max
0.2 V
Compare 2N5551TRE with alternatives
Compare 2N5551ZL1 with alternatives