2N5551
vs
MMBT5551LT3G
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
DIODES INC
|
ONSEMI
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Diodes Incorporated
|
onsemi
|
| Collector Current-Max (IC) |
0.6 A
|
0.06 A
|
| Collector-Base Capacitance-Max |
6 pF
|
|
| Collector-Emitter Voltage-Max |
160 V
|
160 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
80
|
30
|
| JEDEC-95 Code |
TO-92
|
TO-236AB
|
| JESD-30 Code |
O-PBCY-W3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.35 W
|
0.3 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN LEAD
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
200 MHz
|
| VCEsat-Max |
0.25 V
|
0.2 V
|
| Base Number Matches |
10
|
2
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
SOT-23 (TO-236) 3 LEAD
|
| Package Description |
|
TO-236, 3 PIN
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
318-08
|
| Factory Lead Time |
|
14 Weeks
|
| Date Of Intro |
|
1999-01-01
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare 2N5551 with alternatives
Compare MMBT5551LT3G with alternatives