2N5547
vs
NDS8410/L99Z
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
TEMIC SEMICONDUCTORS
|
NATIONAL SEMICONDUCTOR CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW NOISE
|
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| FET Technology |
JUNCTION
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
2 pF
|
|
| JEDEC-95 Code |
TO-71
|
|
| JESD-30 Code |
O-MBCY-W6
|
R-PDSO-G8
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
6
|
8
|
| Operating Mode |
DEPLETION MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
8
|
1
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G8
|
| HTS Code |
|
8541.29.00.95
|
| DS Breakdown Voltage-Min |
|
30 V
|
| Drain Current-Max (ID) |
|
10 A
|
| Drain-source On Resistance-Max |
|
0.015 Ω
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation Ambient-Max |
|
1 W
|
|
|
|
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