2N5545
vs
FDS6690A-NBNP006
feature comparison
| Pbfree Code |
No
|
Yes
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
End Of Life
|
| Ihs Manufacturer |
SOLITRON DEVICES INC
|
ONSEMI
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SEPARATE, 2 ELEMENTS
|
SINGLE WITH BUILT-IN DIODE
|
| FET Technology |
JUNCTION
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-71
|
|
| JESD-30 Code |
O-MBCY-W6
|
R-PDSO-G8
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
6
|
8
|
| Operating Mode |
DEPLETION MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.25 W
|
2.5 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
1
|
| Part Package Code |
|
SO 8L NB
|
| Package Description |
|
SOP-8
|
| Manufacturer Package Code |
|
751EB
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| Avalanche Energy Rating (Eas) |
|
96 mJ
|
| DS Breakdown Voltage-Min |
|
30 V
|
| Drain Current-Max (ID) |
|
11 A
|
| Drain-source On Resistance-Max |
|
0.0125 Ω
|
| Feedback Cap-Max (Crss) |
|
115 pF
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
| Pulsed Drain Current-Max (IDM) |
|
50 A
|
| Terminal Finish |
|
MATTE TIN
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare 2N5545 with alternatives
Compare FDS6690A-NBNP006 with alternatives