2N5197
vs
PMWD26UN
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
PHILIPS SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| FET Technology |
JUNCTION
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
e3
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.25 W
|
2.3 W
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn)
|
| Base Number Matches |
16
|
2
|
| Drain Current-Max (ID) |
|
5.2 A
|
| Operating Mode |
|
ENHANCEMENT MODE
|
|
|
|