2N5114TIN/LEAD
vs
JAN2N5114UB
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
VPT COMPONENTS
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
8541.21.00.95
|
| Date Of Intro |
2018-01-30
|
2019-11-04
|
| Configuration |
SINGLE
|
SINGLE
|
| Drain-source On Resistance-Max |
75 Ω
|
75 Ω
|
| FET Technology |
JUNCTION
|
JUNCTION
|
| Feedback Cap-Max (Crss) |
7 pF
|
7 pF
|
| JEDEC-95 Code |
TO-18
|
|
| JESD-30 Code |
O-MBCY-W3
|
R-XDSO-N3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
METAL
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation Ambient-Max |
0.5 W
|
0.5 W
|
| Power Dissipation-Max (Abs) |
0.5 W
|
0.5 W
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Additional Feature |
|
HIGH RELIABILITY
|
| DS Breakdown Voltage-Min |
|
30 V
|
| Qualification Status |
|
Qualified
|
| Reference Standard |
|
MIL-19500
|
|
|
|
Compare 2N5114TIN/LEAD with alternatives