2N5114E3
vs
2N5114
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
SILICONIX INC
|
| Part Package Code |
BCY
|
BCY
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH RELIABILITY
|
LOW INSERTION LOSS
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
30 V
|
|
| Drain-source On Resistance-Max |
75 Ω
|
75 Ω
|
| FET Technology |
JUNCTION
|
JUNCTION
|
| Feedback Cap-Max (Crss) |
7 pF
|
7 pF
|
| JEDEC-95 Code |
TO-206AA
|
TO-206AA
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
28
|
| Case Connection |
|
GATE
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
200 °C
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN LEAD
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare 2N5114E3 with alternatives
Compare 2N5114 with alternatives