2N4912
vs
2N4912
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
CRIMSON SEMICONDUCTOR INC
MOSPEC SEMICONDUCTOR CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOW LEAKAGE
Collector Current-Max (IC)
4 A
1 A
Collector-Emitter Voltage-Max
80 V
80 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
20
10
JEDEC-95 Code
TO-66
TO-66
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
25 W
25 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
3 MHz
3 MHz
VCEsat-Max
0.6 V
Base Number Matches
1
1
Part Package Code
TO-66
Package Description
TO-66, 2 PIN
Pin Count
2
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Compare 2N4912 with alternatives
Compare 2N4912 with alternatives