2N4859
vs
2N4859APBFREE
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
CENTRAL SEMICONDUCTOR CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| FET Technology |
JUNCTION
|
JUNCTION
|
| JESD-609 Code |
e0
|
e3
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.36 W
|
0.36 W
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN OVER NICKEL
|
| Base Number Matches |
28
|
1
|
| Date Of Intro |
|
2018-01-30
|
| Configuration |
|
SINGLE
|
| DS Breakdown Voltage-Min |
|
30 V
|
| Drain-source On Resistance-Max |
|
25 Ω
|
| Feedback Cap-Max (Crss) |
|
4 pF
|
| JEDEC-95 Code |
|
TO-18
|
| JESD-30 Code |
|
O-MBCY-W3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
DEPLETION MODE
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Power Dissipation Ambient-Max |
|
0.36 W
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare 2N4859APBFREE with alternatives