2N4365 vs 2N4367E3 feature comparison

2N4365 Semitronics Corp

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2N4367E3 Microsemi Corporation

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer SEMITRONICS CORP MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.30.00.80 8541.30.00.80
Configuration SINGLE SINGLE
Critical Rate of Rise of Off-State Voltage-Min 100 V/us
DC Gate Trigger Current-Max 250 mA 100 mA
DC Gate Trigger Voltage-Max 5 V
Holding Current-Max 200 mA
JEDEC-95 Code TO-94 TO-209AC
JESD-30 Code O-MUPM-H3 O-MUPM-H3
Leakage Current-Max 10 mA
Non-Repetitive Pk On-state Cur 1600 A
Number of Elements 1 1
Number of Terminals 3 3
On-state Current-Max 70000 A
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -40 °C -65 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style POST/STUD MOUNT POST/STUD MOUNT
Qualification Status Not Qualified
Repetitive Peak Off-state Voltage 800 V
Repetitive Peak Reverse Voltage 800 V 1200 V
Surface Mount NO NO
Terminal Form HIGH CURRENT CABLE HIGH CURRENT CABLE
Terminal Position UPPER UPPER
Trigger Device Type SCR SCR
Base Number Matches 1 1
Package Description POST/STUD MOUNT, O-MUPM-H3
RMS On-state Current-Max 110 A

Compare 2N4365 with alternatives

Compare 2N4367E3 with alternatives