2N4355
vs
2C3762
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
SEMICOA CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.95
Collector Current-Max (IC)
1 A
Collector-Base Capacitance-Max
30 pF
Collector-Emitter Voltage-Max
60 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
75
100
JEDEC-95 Code
TO-105
JESD-30 Code
O-PBCY-W3
S-XUUC-N2
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
ROUND
SQUARE
Package Style
CYLINDRICAL
UNCASED CHIP
Polarity/Channel Type
PNP
PNP
Power Dissipation Ambient-Max
0.35 W
Power Dissipation-Max (Abs)
0.35 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
TIN LEAD
Terminal Form
WIRE
NO LEAD
Terminal Position
BOTTOM
UPPER
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
100 MHz
Turn-off Time-Max (toff)
400 ns
Turn-on Time-Max (ton)
100 ns
VCEsat-Max
1 V
Base Number Matches
3
1
Part Package Code
DIE
Package Description
DIE-2
Pin Count
2
Compare 2N4355 with alternatives
Compare 2C3762 with alternatives