2N4354PBFREE
vs
2N4354TIN/LEAD
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
CENTRAL SEMICONDUCTOR CORP
|
Package Description |
CYLINDRICAL, O-PBCY-W3
|
CYLINDRICAL, O-PBCY-W3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Date Of Intro |
2018-10-31
|
2018-10-31
|
Collector Current-Max (IC) |
1 A
|
1 A
|
Collector-Base Capacitance-Max |
30 pF
|
30 pF
|
Collector-Emitter Voltage-Max |
60 V
|
60 V
|
Configuration |
SINGLE
|
SINGLE
|
DC Current Gain-Min (hFE) |
30
|
30
|
JEDEC-95 Code |
TO-105
|
TO-105
|
JESD-30 Code |
O-PBCY-W3
|
O-PBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
-65 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
PNP
|
PNP
|
Power Dissipation Ambient-Max |
0.35 W
|
0.35 W
|
Power Dissipation-Max (Abs) |
0.35 W
|
0.35 W
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
Turn-off Time-Max (toff) |
400 ns
|
400 ns
|
Turn-on Time-Max (ton) |
100 ns
|
100 ns
|
VCEsat-Max |
0.5 V
|
0.5 V
|
Base Number Matches |
1
|
1
|
|
|
|
Compare 2N4354PBFREE with alternatives
Compare 2N4354TIN/LEAD with alternatives