2N4338
vs
2N4338
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
INTER F E T CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Additional Feature |
LOW NOISE
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
50 V
|
|
| FET Technology |
JUNCTION
|
JUNCTION
|
| Feedback Cap-Max (Crss) |
2 pF
|
3 pF
|
| JEDEC-95 Code |
TO-18
|
TO-18
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
0.325 W
|
|
| Power Dissipation-Max (Abs) |
0.325 W
|
0.3 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
1
|
| Samacsys Manufacturer |
|
InterFET
|
| Case Connection |
|
GATE
|
| Drain-source On Resistance-Max |
|
2500 Ω
|
|
|
|
Compare 2N4338 with alternatives
Compare 2N4338 with alternatives