2N3960
vs
MRF521
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ASI SEMICONDUCTOR INC
|
MOTOROLA INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
40
|
25
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Polarity/Channel Type |
NPN
|
PNP
|
| Power Dissipation-Max (Abs) |
0.4 W
|
0.75 W
|
| Surface Mount |
NO
|
YES
|
| Transition Frequency-Nom (fT) |
1.2 MHz
|
4200 MHz
|
| Base Number Matches |
7
|
3
|
| Rohs Code |
|
No
|
| Package Description |
|
DISK BUTTON, O-PRDB-F4
|
| HTS Code |
|
8541.21.00.75
|
| Additional Feature |
|
LOW NOISE
|
| Collector Current-Max (IC) |
|
0.07 A
|
| Collector-Base Capacitance-Max |
|
1.5 pF
|
| Collector-Emitter Voltage-Max |
|
10 V
|
| Highest Frequency Band |
|
S BAND
|
| JESD-30 Code |
|
O-PRDB-F4
|
| JESD-609 Code |
|
e0
|
| Number of Terminals |
|
4
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
DISK BUTTON
|
| Power Dissipation Ambient-Max |
|
0.75 W
|
| Power Gain-Min (Gp) |
|
10 dB
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Form |
|
FLAT
|
| Terminal Position |
|
RADIAL
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare MRF521 with alternatives