2N3810L
vs
JANTXV2N3810
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
RAYTHEON SEMICONDUCTOR
|
| Package Description |
TO-78, 8 PIN
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Collector Current-Max (IC) |
0.05 A
|
|
| Collector-Base Capacitance-Max |
5 pF
|
|
| Collector-Emitter Voltage-Max |
60 V
|
|
| DC Current Gain-Min (hFE) |
125
|
|
| JEDEC-95 Code |
TO-78
|
TO-78
|
| JESD-30 Code |
O-MBCY-W6
|
O-MBCY-W8
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
6
|
8
|
| Operating Temperature-Max |
200 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation Ambient-Max |
0.35 W
|
|
| Power Dissipation-Max (Abs) |
0.35 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
0.25 V
|
|
| Base Number Matches |
6
|
2
|
| Additional Feature |
|
LOW NOISE
|
| Configuration |
|
SINGLE
|
| Reference Standard |
|
MIL
|
| Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare 2N3810L with alternatives
Compare JANTXV2N3810 with alternatives