2N3790
vs
BD810AF
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
GENERAL TRANSISTOR CORP
|
MOTOROLA INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
10 A
|
10 A
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
25
|
15
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
150 W
|
|
| Surface Mount |
NO
|
NO
|
| Transition Frequency-Nom (fT) |
0.03 MHz
|
1.5 MHz
|
| Base Number Matches |
33
|
3
|
| Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
| HTS Code |
|
8541.29.00.95
|
| Case Connection |
|
COLLECTOR
|
| Collector-Emitter Voltage-Max |
|
80 V
|
| JEDEC-95 Code |
|
TO-220AB
|
| JESD-30 Code |
|
R-PSFM-T3
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Power Dissipation Ambient-Max |
|
90 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|