2N3749
vs
2N3749
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
UNITRODE CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
ISOLATED
Collector Current-Max (IC)
5 A
5 A
Collector-Emitter Voltage-Max
80 V
80 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
15
15
JEDEC-95 Code
TO-59
TO-111
JESD-30 Code
O-MUPM-X3
O-MUPM-D4
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
4
Operating Temperature-Max
200 °C
200 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
POST/STUD MOUNT
POST/STUD MOUNT
Polarity/Channel Type
PNP
NPN
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
UNSPECIFIED
SOLDER LUG
Terminal Position
UPPER
UPPER
Transistor Element Material
SILICON
SILICON
Base Number Matches
6
4
HTS Code
8541.29.00.95
Collector-Base Capacitance-Max
150 pF
Power Dissipation Ambient-Max
30 W
Power Dissipation-Max (Abs)
30 W
Transistor Application
SWITCHING
Transition Frequency-Nom (fT)
20 MHz
Turn-off Time-Max (toff)
2000 ns
Turn-on Time-Max (ton)
360 ns
VCEsat-Max
1.5 V
Compare 2N3749 with alternatives
Compare 2N3749 with alternatives