2N3749 vs JANTXV2N3749 feature comparison

2N3749 International Devices Inc

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JANTXV2N3749 New England Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL DEVICES INC NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 5 A 5 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 15
Number of Elements 1 1
Operating Temperature-Max 175 °C
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 30 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 40 MHz 20 MHz
Base Number Matches 1 1
JEDEC-95 Code TO-111
JESD-30 Code O-MUPM-D4
Number of Terminals 4
Package Body Material METAL
Package Shape ROUND
Package Style POST/STUD MOUNT
Terminal Form SOLDER LUG
Terminal Position UPPER
Transistor Application SWITCHING

Compare 2N3749 with alternatives

Compare JANTXV2N3749 with alternatives