We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

2N3749 vs 2N3749 feature comparison

2N3749 Advanced Semiconductor Inc

Buy Now Datasheet

2N3749 Solid State Devices Inc (SSDI)

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer ASI SEMICONDUCTOR INC SOLID STATE DEVICES INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 5 A 5 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 40
Number of Elements 1 1
Operating Temperature-Max 175 °C 175 °C
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 30 W 30 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 40 MHz 40 MHz
Base Number Matches 1 1
Package Description STR-10
Pin Count 10
Transistors » Power Bipolar Transistors
Transistors » Power Bipolar Transistors

Compare 2N3749 with alternatives

Compare 2N3749 with alternatives