2N3501UB
vs
JAN2N3501UB
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Contact Manufacturer
Ihs Manufacturer
VPT COMPONENTS
SEMICOA CORP
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Date Of Intro
2019-08-29
Collector Current-Max (IC)
0.3 A
0.3 A
Collector-Base Capacitance-Max
8 pF
Collector-Emitter Voltage-Max
150 V
150 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
20
20
JESD-30 Code
R-CDSO-N3
R-CDSO-N3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
200 °C
200 °C
Operating Temperature-Min
-65 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
1 W
Power Dissipation-Max (Abs)
0.5 W
0.5 W
Surface Mount
YES
YES
Terminal Form
NO LEAD
NO LEAD
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
1150 ns
Turn-on Time-Max (ton)
115 ns
VCEsat-Max
0.4 V
Base Number Matches
4
5
Rohs Code
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Qualified
Reference Standard
MIL-19500/366
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
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