2N3366
vs
ZVP1320ASTZ
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
ZETEX PLC
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| FET Technology |
JUNCTION
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.3 W
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Base Number Matches |
4
|
2
|
| Package Description |
|
IN-LINE, R-PSIP-W3
|
| Configuration |
|
SINGLE
|
| DS Breakdown Voltage-Min |
|
200 V
|
| Drain Current-Max (ID) |
|
0.07 A
|
| Drain-source On Resistance-Max |
|
80 Ω
|
| JESD-30 Code |
|
R-PSIP-W3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
IN-LINE
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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