2N3019
vs
JAN2N3019
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA INC
|
RAYTHEON SEMICONDUCTOR
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Collector Current-Max (IC) |
1 A
|
|
| Collector-Base Capacitance-Max |
12 pF
|
|
| Collector-Emitter Voltage-Max |
80 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
15
|
|
| JEDEC-95 Code |
TO-39
|
TO-39
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
200 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
5 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
|
| VCEsat-Max |
0.5 V
|
|
| Base Number Matches |
22
|
1
|
| Reference Standard |
|
MIL
|
|
|
|
Compare 2N3019 with alternatives
Compare JAN2N3019 with alternatives