2N2646PBFREE
vs
2N2646
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
TEXAS INSTRUMENTS INC
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Date Of Intro |
2018-10-31
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Emitter Current-Max |
50 mA
|
50 mA
|
| Inter-base Voltage-Max |
35 V
|
35 V
|
| Intrinsic Stand-off Ratio-Max |
0.75
|
0.75
|
| Intrinsic Stand-off Ratio-Min |
0.56
|
0.56
|
| JEDEC-95 Code |
TO-18
|
TO-18
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
125 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Peak Point Current-Max |
5 mA
|
5 mA
|
| Power Dissipation Ambient-Max |
0.3 W
|
|
| Power Dissipation-Max (Abs) |
0.3 W
|
0.3 W
|
| Static Inter-base Res-Max |
9.1 kΩ
|
9.1 kΩ
|
| Static Inter-base Res-Min |
4.7 kΩ
|
4.7 kΩ
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Valley Point Current-Min |
4 mA
|
4 mA
|
| Base Number Matches |
1
|
1
|
| Case Connection |
|
BASE2
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Qualification Status |
|
Not Qualified
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare 2N2646PBFREE with alternatives
Compare 2N2646 with alternatives