2N2222 vs 2N2222 feature comparison

2N2222 STMicroelectronics

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2N2222 Raytheon Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS RAYTHEON SEMICONDUCTOR
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer STMicroelectronics
Collector Current-Max (IC) 0.8 A 0.8 A
Collector-Emitter Voltage-Max 30 V 30 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 100 100
JEDEC-95 Code TO-18 TO-18
JESD-30 Code O-MBCY-W3 O-MBCY-W3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 175 °C 175 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard CECC50002-101
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 38 6
Package Description TO-18, 3 PIN
Collector-Base Capacitance-Max 8 pF
Turn-off Time-Max (toff) 285 ns
Turn-on Time-Max (ton) 35 ns
VCEsat-Max 1.6 V

Compare 2N2222 with alternatives

Compare 2N2222 with alternatives