2N2033
vs
MJD29C-T1
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SILICON TRANSISTOR CORP
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
TO-5
|
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
SMALL OUTLINE, R-PSSO-G2
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
3 A
|
1 A
|
| Collector-Emitter Voltage-Max |
60 V
|
100 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
20
|
15
|
| JEDEC-95 Code |
TO-5
|
|
| JESD-30 Code |
O-MBCY-W3
|
R-PSSO-G2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
5 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
1 MHz
|
3 MHz
|
| Base Number Matches |
14
|
1
|
| HTS Code |
|
8541.29.00.95
|
| Power Dissipation Ambient-Max |
|
15 W
|
| Transistor Application |
|
AMPLIFIER
|
| VCEsat-Max |
|
0.7 V
|
|
|
|
Compare 2N2033 with alternatives
Compare MJD29C-T1 with alternatives