2N1711S vs 2N1711 feature comparison

2N1711S Microsemi Corporation

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2N1711 Diodes Incorporated

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP ZETEX PLC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Microsemi Corporation
Collector Current-Max (IC) 0.5 A 1 A
Collector-Emitter Voltage-Max 30 V 50 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 50 100
JEDEC-95 Code TO-5 TO-39
JESD-30 Code O-MBCY-W3 O-MBCY-W3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 200 °C 200 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Element Material SILICON SILICON
Base Number Matches 5 3
Package Description CYLINDRICAL, O-MBCY-W3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 235
Power Dissipation-Max (Abs) 0.8 W
Reference Standard CECC
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transition Frequency-Nom (fT) 70 MHz
VCEsat-Max 1.5 V

Compare 2N1711S with alternatives

Compare 2N1711 with alternatives