2KBP08M-G
vs
KBP08M-G
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
SENSITRON SEMICONDUCTOR
|
Package Description |
R-PSIP-W4
|
R-PSIP-W4
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Breakdown Voltage-Min |
800 V
|
800 V
|
Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1.1 V
|
1.1 V
|
JESD-30 Code |
R-PSIP-W4
|
R-PSIP-W4
|
Moisture Sensitivity Level |
1
|
1
|
Non-rep Pk Forward Current-Max |
60 A
|
50 A
|
Number of Elements |
4
|
4
|
Number of Phases |
1
|
1
|
Number of Terminals |
4
|
4
|
Output Current-Max |
2 A
|
1.5 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
UL RECOGNIZED
|
UL RECOGNIZED
|
Rep Pk Reverse Voltage-Max |
800 V
|
800 V
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
SINGLE
|
SINGLE
|
Base Number Matches |
2
|
1
|
Pbfree Code |
|
Yes
|
Pin Count |
|
4
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare 2KBP08M-G with alternatives
Compare KBP08M-G with alternatives