2612F
vs
2606B
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SIGNETICS CORP
|
LSI CORP
|
| Package Description |
,
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8542.32.00.41
|
|
| Access Time-Max |
400 ns
|
|
| JESD-30 Code |
R-GDIP-T16
|
|
| Memory Density |
1024 bit
|
|
| Memory IC Type |
STANDARD SRAM
|
|
| Memory Width |
4
|
|
| Number of Functions |
1
|
|
| Number of Ports |
1
|
|
| Number of Terminals |
16
|
|
| Number of Words |
256 words
|
|
| Number of Words Code |
256
|
|
| Operating Mode |
ASYNCHRONOUS
|
|
| Operating Temperature-Max |
70 °C
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
256X4
|
|
| Output Characteristics |
3-STATE
|
|
| Output Enable |
NO
|
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Parallel/Serial |
PARALLEL
|
|
| Qualification Status |
Not Qualified
|
|
| Supply Voltage-Max (Vsup) |
5.25 V
|
|
| Supply Voltage-Min (Vsup) |
4.75 V
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
NMOS
|
|
| Temperature Grade |
COMMERCIAL
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
3
|
8
|
| Mounting Feature |
|
THROUGH HOLE MOUNT
|
| Optoelectronic Device Type |
|
PIN PHOTODIODE
|
| Semiconductor Material |
|
InGaAs
|
|
|
|
Compare 2612F with alternatives