25AA640A-E/MNY vs 25AA640AT-E/MNY feature comparison

25AA640A-E/MNY Microchip Technology Inc

Buy Now Datasheet

25AA640AT-E/MNY Microchip Technology Inc

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Memory IC Type EEPROM EEPROM
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Serial Bus Type SPI SPI
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Base Number Matches 1 1
Rohs Code Yes
Factory Lead Time 8 Weeks
Clock Frequency-Max (fCLK) 10 MHz
Data Retention Time-Min 200
Endurance 1000000 Write/Erase Cycles
JESD-30 Code S-PDSO-N10
JESD-609 Code e4
Length 3 mm
Memory Density 65536 bit
Memory Width 8
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 10
Number of Words 8192 words
Number of Words Code 8000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Organization 8KX8
Package Body Material PLASTIC/EPOXY
Package Code HVSON
Package Equivalence Code SOLCC10,.12,20
Package Shape SQUARE
Package Style SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial SERIAL
Programming Voltage 2.5 V
Screening Level TS 16949
Seated Height-Max 0.8 mm
Standby Current-Max 0.000005 A
Supply Current-Max 0.005 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 1.8 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade AUTOMOTIVE
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD
Terminal Pitch 0.5 mm
Terminal Position DUAL
Width 3 mm
Write Cycle Time-Max (tWC) 5 ms
Write Protection HARDWARE

Compare 25AA640A-E/MNY with alternatives

Compare 25AA640AT-E/MNY with alternatives