1T406 vs BBY31,215 feature comparison

1T406 Sony Semiconductor

Buy Now Datasheet

BBY31,215 NXP Semiconductors

Buy Now Datasheet
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SONY CORP NXP SEMICONDUCTORS
Package Description R-PDSO-F2 R-PDSO-G3
Pin Count 2 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 34 V 30 V
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 14.5
Diode Capacitance-Nom 43.41 pF 16.5 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-G3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 34 V
Surface Mount YES YES
Terminal Finish TIN LEAD TIN
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
Diode Cap Tolerance 11.11%
Frequency Band ULTRA HIGH FREQUENCY
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 0.01 µA
Reverse Test Voltage 28 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1T406 with alternatives

Compare BBY31,215 with alternatives