1T359
vs
BB143,115
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SONY CORP
|
NXP SEMICONDUCTORS
|
| Package Description |
R-PDSO-F2
|
R-PDSO-F2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Breakdown Voltage-Min |
30 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Nom |
29.5 pF
|
5.3 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| Frequency Band |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
|
| JESD-30 Code |
R-PDSO-F2
|
R-PDSO-F2
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
85 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
35 V
|
|
| Reverse Current-Max |
0.02 µA
|
|
| Reverse Test Voltage |
28 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
TIN
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
| Base Number Matches |
1
|
1
|
| Diode Capacitance Ratio-Min |
|
2.1
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1T359 with alternatives
Compare BB143,115 with alternatives
-
BB143,115 vs 934055435115
-
BB143,115 vs BB143T/R
-
BB143,115 vs 1SV293
-
BB143,115 vs HVU89
-
BB143,115 vs BB181,335
-
BB143,115 vs 1SV214TPHR4
-
BB143,115 vs HVU350
-
BB143,115 vs BBY62TRL
-
BB143,115 vs 1SV277