1SV225 vs BB804,215 feature comparison

1SV225 Toshiba America Electronic Components

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BB804,215 NXP Semiconductors

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP NXP SEMICONDUCTORS
Part Package Code SC-59 SOT-23
Package Description R-PDSO-G3 PLASTIC, SMD, 3 PIN
Pin Count 3 3
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 32 V 18 V
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Cap Tolerance 6.33% 5.08%
Diode Capacitance Ratio-Min 2.6 1.65
Diode Capacitance-Nom 19.7 pF 44.25 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e3
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 125 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 32 V 18 V
Reverse Current-Max 5e-8 µA 0.02 µA
Reverse Test Voltage 30 V 16 V
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.80
Frequency Band VERY HIGH FREQUENCY
JEDEC-95 Code TO-236AB
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260

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