1SS307TE85R
vs
1N5622HRX
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
BKC SEMICONDUCTORS INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.70
|
|
| Application |
GENERAL PURPOSE
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.3 V
|
|
| JESD-30 Code |
R-PDSO-G3
|
O-LALF-W2
|
| Non-rep Pk Forward Current-Max |
1 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
125 °C
|
|
| Output Current-Max |
0.1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Power Dissipation-Max |
0.15 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reverse Current-Max |
0.01 µA
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
O-LALF-W2
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Case Connection |
|
ISOLATED
|
| Reverse Recovery Time-Max |
|
2 µs
|
|
|
|
Compare 1SS307TE85R with alternatives
Compare 1N5622HRX with alternatives