1SMB9.0ATR13 vs SMBJ9.0-G feature comparison

1SMB9.0ATR13 Central Semiconductor Corp

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SMBJ9.0-G Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 11.5 V 12.6 V
Breakdown Voltage-Min 10 V 10 V
Breakdown Voltage-Nom 10.75 V
Clamping Voltage-Max 15.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 9 V 9 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
JEDEC-95 Code DO-214AA
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1SMB9.0ATR13 with alternatives

Compare SMBJ9.0-G with alternatives