1SMB8.0ATR13
vs
SMBJ8.0-GT3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
10.23 V
11.3 V
Breakdown Voltage-Min
8.89 V
8.99 V
Breakdown Voltage-Nom
9.56 V
Clamping Voltage-Max
13.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
8 V
8 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
JEDEC-95 Code
DO-214AA
Moisture Sensitivity Level
1
Reference Standard
UL RECOGNIZED
Compare 1SMB8.0ATR13 with alternatives
Compare SMBJ8.0-GT3 with alternatives