1SMB70ATR13
vs
SMBJ70E3
feature comparison
All Stats
Differences Only
Pbfree Code
No
Yes
Rohs Code
No
Yes
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
MICROSEMI CORP
Package Description
R-PDSO-C2
R-PDSO-J2
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
89.5 V
95.1 V
Breakdown Voltage-Min
77.8 V
77.8 V
Breakdown Voltage-Nom
83.65 V
86.45 V
Clamping Voltage-Max
113 V
125 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-J2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
70 V
70 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
C BEND
J BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Part Package Code
DO-214AA
Pin Count
2
JEDEC-95 Code
DO-214AA
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
1.38 W
Time@Peak Reflow Temperature-Max (s)
10
Compare 1SMB70ATR13 with alternatives
Compare SMBJ70E3 with alternatives