1SMB70ATR13 vs SMBJ70E3 feature comparison

1SMB70ATR13 Central Semiconductor Corp

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SMBJ70E3 Microsemi Corporation

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Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-J2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 89.5 V 95.1 V
Breakdown Voltage-Min 77.8 V 77.8 V
Breakdown Voltage-Nom 83.65 V 86.45 V
Clamping Voltage-Max 113 V 125 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-J2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 70 V 70 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Part Package Code DO-214AA
Pin Count 2
JEDEC-95 Code DO-214AA
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 1.38 W
Time@Peak Reflow Temperature-Max (s) 10

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