1SMA58AT3G
vs
SMBJ150-G
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Package Description |
R-PDSO-C2
|
R-PDSO-C2
|
| Pin Count |
2
|
|
| Manufacturer Package Code |
403D-02
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Breakdown Voltage-Max |
71.5 V
|
211.5 V
|
| Breakdown Voltage-Min |
64.4 V
|
167 V
|
| Breakdown Voltage-Nom |
67.8 V
|
|
| Clamping Voltage-Max |
93.6 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
600 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.5 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
58 V
|
150 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
AVALANCHE
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
| Base Number Matches |
2
|
2
|
| JEDEC-95 Code |
|
DO-214AA
|
| Reference Standard |
|
UL RECOGNIZED
|
|
|
|
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