1S30
vs
1N18
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code
R-1
R-1
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
HIGH RELIABILITY
Application
GENERAL PURPOSE
GENERAL PURPOSE
Breakdown Voltage-Min
30 V
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.55 V
0.55 V
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
35 A
25 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
30 V
30 V
Reverse Current-Max
500 µA
Reverse Test Voltage
30 V
Surface Mount
NO
NO
Technology
SCHOTTKY
SCHOTTKY
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
14
11
Rohs Code
Peak Reflow Temperature (Cel)
260
Compare 1N18 with alternatives