1N991BE3/TR vs JAN1N991B-1 feature comparison

1N991BE3/TR Microsemi Corporation

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JAN1N991B-1 Microchip Technology Inc

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Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Package Description O-LALF-W2 DO-35, 2 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 2200 Ω 2200 Ω
JEDEC-95 Code DO-204AA DO-204AH
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.417 W 0.4 W
Qualification Status Not Qualified Qualified
Reference Voltage-Nom 180 V 180 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish MATTE TIN TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 0.68 mA 0.68 mA
Base Number Matches 1 4
Additional Feature METALLURGICALLY BONDED
Knee Impedance-Max 7100 Ω
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C
Reference Standard MIL-19500
Reverse Current-Max 0.5 µA
Reverse Test Voltage 137 V
Voltage Temp Coeff-Max 198 mV/°C

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