1N914
vs
1N4446
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
NTE ELECTRONICS INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1 V
|
| Non-rep Pk Forward Current-Max |
0.45 A
|
1 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Output Current-Max |
0.075 A
|
0.2 A
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
3
|
1
|
| Application |
|
GENERAL PURPOSE
|
| Breakdown Voltage-Min |
|
100 V
|
| Case Connection |
|
ISOLATED
|
| JEDEC-95 Code |
|
DO-35
|
| JESD-30 Code |
|
O-XALF-W2
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
175 °C
|
| Package Body Material |
|
UNSPECIFIED
|
| Package Shape |
|
ROUND
|
| Power Dissipation-Max |
|
0.5 W
|
| Reverse Current-Max |
|
0.025 µA
|
| Reverse Test Voltage |
|
20 V
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
Compare 1N914 with alternatives
Compare 1N4446 with alternatives