1N821AT/R vs 1N821-1 feature comparison

1N821AT/R NXP Semiconductors

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1N821-1 Microsemi Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS MICROSEMI CORP
Part Package Code DO-34 DO-7
Package Description O-LALF-W2 DO-35, 2 PIN
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-34 DO-204AH
JESD-30 Code O-LALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 100 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.4 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 6.2 V 6.2 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Temp Coeff-Max 0.62 mV/°C 0.62 mV/°C
Voltage Tol-Max 5% 5%
Base Number Matches 1 17
Pbfree Code No
Rohs Code No
Samacsys Manufacturer Microsemi Corporation
Additional Feature METALLURGICALLY BONDED
Dynamic Impedance-Max 15 Ω
JESD-609 Code e0
Reference Standard MIL-19500
Reverse Current-Max 2 µA
Reverse Test Voltage 3 V
Terminal Finish TIN LEAD
Working Test Current 7.5 mA

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