1N8158US vs MX1N8158 feature comparison

1N8158US Microchip Technology Inc

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MX1N8158 Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Package Description MELF-2
Reach Compliance Code compliant compliant
Factory Lead Time 21 Weeks
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 19 V 19 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 27.7 V 27.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 150 W 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard IEC-61000-4-2, 4-4 IEC-61000-4-2,4-4,4-5
Rep Pk Reverse Voltage-Max 17 V 17 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Form WRAP AROUND WIRE
Terminal Position END AXIAL
Base Number Matches 2 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Reverse Current-Max 0.5 µA

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