1N8156E3 vs 1N8156 feature comparison

1N8156E3 Microsemi Corporation

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1N8156 Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 15.2 V 15.2 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 22.3 V 22.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 150 W 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard IEC-61000-4-2,4-4,4-5 IEC-61000-4-2,4-4,4-5
Rep Pk Reverse Voltage-Max 13 V 13 V
Reverse Current-Max 1 µA 1 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2