1N8152US vs MQ1N8152US feature comparison

1N8152US Microsemi Corporation

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MQ1N8152US Microchip Technology Inc

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Rohs Code No No
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Package Description MELF-2 MELF-2
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 10.4 V 10.4 V
Clamping Voltage-Max 15.6 V 15.6 V
Configuration SINGLE SINGLE
Diode Capacitance-Min 4 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 O-LELF-R2
Non-rep Peak Rev Power Dis-Max 150 W 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 9 V 9 V
Reverse Current-Max 5 µA
Reverse Test Voltage 9 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 2 2
Factory Lead Time 25 Weeks
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Reference Standard IEC-61000-4-2, 4-4; MIL-19500

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