1N8152US
vs
MQ1N8152
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
MICROCHIP TECHNOLOGY INC
Package Description
MELF-2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
10.4 V
10.4 V
Clamping Voltage-Max
15.6 V
15.6 V
Configuration
SINGLE
SINGLE
Diode Capacitance-Min
4 pF
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LELF-R2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
150 W
150 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Rep Pk Reverse Voltage-Max
9 V
9 V
Reverse Current-Max
5 µA
5 µA
Reverse Test Voltage
9 V
Surface Mount
YES
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WRAP AROUND
WIRE
Terminal Position
END
AXIAL
Base Number Matches
2
2
Factory Lead Time
25 Weeks
Additional Feature
HIGH RELIABILITY
Case Connection
ISOLATED
Reference Standard
IEC-61000-4-2,4-4,4-5
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